|Buy Now||ID||Diam||Type||Dopant||Orien||Res (Ohm-cm)||Thick (um)||Polish||Grade||Lead Time||Quantity||1 Unit Price||5 Unit Price||10 Unit Price||25 Unit Price||50 Unit Price||100 Unit Price||200 Unit Price||500 Unit Price||Description|
|1299||100mm||Undoped||(100)||1E7||625um||DSP||Prime||In Stock||38||$175.90||$175.90||$175.90||$175.90||$167.00||EPD (Average): less than or equal to 5,000, Doping: Semi-Insulating, Undoped.|
Compounded from the elements Gallium and Arsenic. GaAs is used in the manufacture of devices such as microwaves, integrated circuits, monolithic microwave integrated circuits, infrered lieght-emitting diodes, laser diodes, solar cells and optical windows.
GaAs has higher saturated electron velocity and higher electron mobility than Silicon Wafers.